Deep submicron Standard Cell |
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| We leverage and incorporate Fujitsu 90nm,65nm, and finer geometry standard cell solutions. |
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| Fujitsu 90nm Standard Cell Special Features: |
1. Efficiency is 25% faster than that of 90nm technology of other major semiconductor
　 manufacturers.
2. Leakage current is approximated 1/5th of that of general semiconductor manufacturers. |
| Item |
Typical semiconductor venders (90nm) |
Fujitsu (90nm) |
Speed |
100 |
125 |
Operational power |
100 |
75 |
Standby power |
100 |
21 |
| Table: Benchmark results for 90nm technology |
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3. Minimum gate length of 40nm.
4. Low-k, up to 10 layer interconnection technology.
5. Silicon-proven high speed I/O and PHY macros ready for use.
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| Fujitsu 65nm Standard Cell Special Features: |
1. The 30nm long gate.
2. 20 to 30% faster performance than the 90nm generation
3. Transistor density doubled compared with the 90nm generation
4. SRAM cell area reduced 50% compared with the 90nm generation.
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| IC Nexus is implementing Fujitsu & EDA tool venders’ stringent reference design flows to offer RTL, Netlist, to FPGA Netlist handoff models to ASIC customers. |
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